SEMICONDUCTORS

Faster chip performances in ever shrinking electronic devices push circuits down to nanometer size. Spintronic devices and optical properties of organic semiconductors depend on their nm level local structure . Orientation and phase mapping with ASTAR sheds light to local texture and phases, while 3D electron diffraction tomography reveals detailed crystal structure of possible impurities. As metrology tool detailed strain maps down to nm scale allow to monitor precisely electrical properties and avoid device failure.

PUBLICATIONS

ASTAR –SEMICONDUCTORS

Ganesh, K.J., et al. “Automated Local Texture and Stress Analysis in Cu Interconnects Using D- STEM and Precession Microscopy.” Microscopy and Microanalysis, vol. 16,no.2,2010,doi:10.1017/S1431927610061933.

STRAIN –SEMICONDUCTORS

A.Bashir et al Strain analysis of a Ge micro disk using precession electron diffraction J.of Applied Physics 2020 DOI: 10.1063/1.5113761

A.D Darbal et al Automated High Precision Strain Measurement Using Nanobeam Diffraction Coupled with Precession Microscopy &Microanalysis 2013 doi: 10.1017/S1431927613005503

A.D Darbal et al Applications of Automated High Resolution Strain Mapping in TEM on the Study of Strain Distribution in MOSFETs Microsc. Microanal. 20 (Suppl 3), 2014 doi:10.1017/S1431927614007053

M.Reisinger et al Cross-sectional stress distribution in AlxGa1-xN heterostructure on Si(111) substrate characterized by ion beam layer removal method and precession electron diffraction Materials and Design 106 (2016) 476–481 http://dx.doi.org/10.1016/j.matdes.2016.06.001

3D ELECTRON DIFFRACTION TOMOGRAPHY –SEMICONDUCTORS

Sarakinou, E., et al. “Structure Characterization of Hard Materials by Precession Electron Diffraction and Automatic Diffraction Tomography: 6H-SiC Semiconductor and Ni 1+xTe 1embedded Nanodomains.” Semiconductor Science and Technology, vol. 27, no. 10, 2012, doi:10.1088/0268-1242/27/10/105003.

David, J., et al. “Crystal Phases in Hybrid Metal-Semiconductor Nanowire Devices.” Nano Letters, vol. 17, no. 4, 2017, pp. 2336–41, doi:10.1021/acs.nanolett.6b05223.