TEM strain mapping analysis

TEM NANOSCALE STRAIN MAPPING

Captura de pantalla 2021-02-11 a las 12.37.12

TopSPIN Strain combines Precession Electron Diffraction (PED) with automated strain mapping and analysis of diffraction patterns by comparing unstrained and strained areas in the same crystalline sample (Patent Pending).

This technique gas the unique advantage of achieving high precision (0.02%) and a spatial resolution down to 3 nm (specimen dependent).

IMAGE GALLERY

SHORT PRODUCT PRESENTATION

STRAIN SPECIFICATIONS

Novel Automated Strain Mapping Solution for TEM/STEM (Patent pending) based on nanobeam precession diffraction patterrns in combination with DigiSTAR. Precision up to 0.02% (200kV FEG) with spatial resolution up to 2nm attainable (FEG-TEM)

High spatial resolution, high precision strain mapping in modern semiconductor devices
Acquisition of STEM reference image
Ultra-fast nanobeam precession electron diffraction scanned acquisition
Typical acquisition time: 5-10 min (150×150)
Time per pixel: 10-40 ms Analysis time 5-10 min
Automated local strain analysis via AppFive proprietary algorithm
Acquisition from individual positions, line profiles, areas
Spatial resolution < 2 nm attainable (FEG TEM)
Monitor engineered strain distributions in modern semiconductor devices
Expected sensitivity : < 2 x 10-4
Intuitive workflow

In combination with TOPSPIN simultaneous orientation/ phase/strain/STEM maps are possible