Novel Automated Strain Mapping Solution for TEM/STEM (Patent pending) based on nanobeam precession diffraction patterrns in combination with DigiSTAR. Precision up to 0.02% (200kV FEG) with spatial resolution up to 2nm attainable (FEG-TEM)

High spatial resolution, high precision strain mapping in modern semiconductor devices
Acquisition of STEM reference image
Ultra-fast nanobeam precession electron diffraction scanned acquisition
Typical acquisition time: 5-10 min (150×150)
Time per pixel: 10-40 ms Analysis time 5-10 min
Automated local strain analysis via AppFive proprietary algorithm
Acquisition from individual positions, line profiles, areas
Spatial resolution < 2 nm attainable (FEG TEM)
Monitor engineered strain distributions in modern semiconductor devices
Expected sensitivity : < 2 x 10-4
Intuitive workflow

In combination with TOPSPIN simultaneous orientation/ phase/strain/STEM maps are possible

Strain maps from the Si regions of a pMOS device
• x and y-directions aligned with [220] and [002] directions in Si.
• Localized biaxial tensile strain close to contact edges.

Strain profile of an Si/SiGe layer

•Strain in x-direction is near zero, indicating a coherent interface.

Download Strain Mapping Application Notes

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