TEM NANOSCALE STRAIN MAPPING
This technique gas the unique advantage of achieving high precision (0.02%) and a spatial resolution down to 3 nm (specimen dependent).
High spatial resolution, high precision strain mapping in modern semiconductor devices
Acquisition of STEM reference image
Ultra-fast nanobeam precession electron diffraction scanned acquisition
Typical acquisition time: 5-10 min (150×150)
Time per pixel: 10-40 ms Analysis time 5-10 min
Automated local strain analysis via AppFive proprietary algorithm
Acquisition from individual positions, line profiles, areas
Spatial resolution < 2 nm attainable (FEG TEM)
Monitor engineered strain distributions in modern semiconductor devices
Expected sensitivity : < 2 x 10-4
Intuitive workflow
In combination with TOPSPIN simultaneous orientation/ phase/strain/STEM maps are possible
